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Toshiba |
Silicon N-Channel IGBT t/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings |
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Toshiba Semiconductor |
Silicon N-Channel IGBT aximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated |
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Toshiba Semiconductor |
Silicon N-Channel IGBT e reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Ha |
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Toshiba Semiconductor |
N-Channel IGBT Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) IGES VGE = ±20V, VCE = 0 ― ICES VCE = 600V, VGE = 0 ― VGE (OFF) I |
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Toshiba Semiconductor |
Silicon N-Channel IGBT = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = ±15 V, RG = 43 Ω (Note1) Min 5.0 Typ. 2.1 2200 0.12 0.40 0.15 0.70 Max ±500 1.0 8.0 2.7 U |
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Toshiba Semiconductor |
N-Channel IGBT rrent Gate−Emitter Cut−Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance |
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Toshiba |
Silicon N-Channel IGBT erating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and in |
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Toshiba |
Silicon N-Channel IGBT (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT30J341 TO-3P(N) 1: Gate 2: Colle |
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Toshiba Semiconductor |
Silicon N-Channel IGBT |
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Toshiba Semiconductor |
Silicon N-Channel IGBT and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please d |
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Toshiba |
Silicon N-Channel IGBT (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emi |
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Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V ( |
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Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V ( |
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Toshiba |
Silicon N-Channel IGBT |
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Desde 2024. D4U Semiconductor.
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