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GT30J110SRA |
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| Part Number | GT30J110SRA |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon N-Channel IGBT |
| Features |
(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching:
IGBT tf = 0.17 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ.) (IC = 30 A, Ta = 25 �) (6) High junction tem... |
| Document |
 GT30J110SRA Data Sheet
PDF 539.97KB |
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Desde 2024. D4U Semiconductor.
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