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GT30J341 |
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| Part Number | GT30J341 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon N-Channel IGBT |
| Features |
(1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector
3. Packaging and Internal Circuit
GT30J341
TO-3P(N)
1: Gate 2: Collector (Heat sink) 3: Emitter
Start of commercial p... |
| Document |
 GT30J341 Data Sheet
PDF 295.62KB |
Similar Datasheet
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| 2 | GT30J311 |
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| 6 | GT30J110SRA |
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Desde 2024. D4U Semiconductor.
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