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Toshiba |
Silicon NPN Transistor ition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 9.75 g (typ.) Min ― ― 230 55 35 ― ― ― ― Typ. ― |
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Toshiba Semiconductor |
NPN TRANSISTOR solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a |
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Toshiba |
2SC5201 maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estim |
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Toshiba |
NPN Transistor (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. Packaging and Internal Circuit 2SC5200N 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P |
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Toshiba |
NPN Transistor (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. Packaging and Internal Circuit 2SC5200N 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P |
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Toshiba |
SILICON NPN TRANSISTOR . High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A) • High Collector Power Dissipation : P C=50W (Tc=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC519A Voltage 2SC520A 2SC521A CollectorEmitter Voltage 2SC519A 2SC520A 2 |
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Toshiba Semiconductor |
Silicon NPN TRANSISTOR in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re |
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Toshiba |
2SC5258 |
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Toshiba Semiconductor |
2SC5280 |
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Toshiba |
Silicon NPN Transistor temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individua |
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Toshiba |
2SC5255 5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEB |
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Toshiba |
SILICON NPN TRANSISTOR • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : I C=1.5A (Max.), P C=10W (Max.) gfe.39MAX SZfe.5MAX Unit in mm 00.45 il 11 l - . ^. , MAXIMUM RATINGS (Ta=2 |
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Toshiba Semiconductor |
NPN TRANSISTOR 5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEB |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba |
2SC5233 tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i. |
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Toshiba Semiconductor |
2SC5242 in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re |
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Toshiba |
2SC5254 5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEB |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba |
MOS Memory |
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Toshiba |
Silicon Gate CMOS Multiport DRAM |
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Desde 2024. D4U Semiconductor.
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