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| Part Number | C5200N |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommende... |
| Features |
(1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage
3. Packaging and Internal Circuit
2SC5200N
1. Base 2. Collector (Heatsink) 3. Emitter
TO-3P(N)
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation
(Note 1)
VCBO VCEO VEBO
IC IB PC
230
V
230
5
15
A
1.5
150
W
Junction temperature Stor... |
| Document |
 C5200N Data Sheet
PDF 152.70KB |
Desde 2024. D4U Semiconductor.
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