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2SC522 |
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| Part Number | 2SC522 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC524, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=10... |
| Features |
• High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : I C=1.5A (Max.), P C=10W (Max.) gfe.39MAX SZfe.5MAX Unit in mm 00.45 il 11 l - . ^. , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SC522 2SC524 Collector- Emitter Voltage Emitter-Base Voltage 2SC522 2SC524 Collector Current Base Current Collector Power Dissipation (Tv=?s°r) Junction Temperature Storage Temperature Range SYMBOL VCBO v CE0 VEBO ic IB PC Tj T stg RATING 140 100 100 60 5 1.5 300 10 175 -65VL75 UNIT V V V A mA ... |
| Document |
 2SC522 Data Sheet
PDF 122.23KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors |
|
| 5 | 2SC5200 |
ON Semiconductor |
NPN Transistor |
|
| 6 | 2SC5200 |
STMicroelectronics |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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