Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC5200 |
| Part Number | 2SC5200 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN TRANSISTOR |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characte. |
| Features | solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-09 1 2016-01-07 Electrical Characteristics (Ta = 25°C) Characteristics Symbol. |
2SC5200 |
| Part Number | 2SC5200 |
| Manufacturer | ON Semiconductor |
| Title | NPN Transistor |
| Description | NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 MHz • High Voltage: VCEO = 250 V • Wide S.O.A. for Reliable Operation • Excellent Gain Linearity for Low THD • Complement to 2SA1943 / FJL4215 • Therm. |
| Features |
• High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 MHz • High Voltage: VCEO = 250 V • Wide S.O.A. for Reliable Operation • Excellent Gain Linearity for Low THD • Complement to 2SA1943 / FJL4215 • Thermal and Electrical Spice Models are Available • Same Transistor is also Available in: ♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts ♦ TO220 Package, FJP5200 : 80. |
2SC5200 |
| Part Number | 2SC5200 |
| Manufacturer | Thinki Semiconductor |
| Title | 150 Watt Silicon NPN Power Transistors |
| Description | ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Collector Base Emitter E C B Fig.1 simplified outline (TO. |
| Features | akdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8A IC=7A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 35 30 200 MHz pF MIN 230 3.0 1.5 5 5 160 TYP. MAX. |
2SC5200 |
| Part Number | 2SC5200 |
| Manufacturer | UTC |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-005.E . |
| Features | * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5200L-x-T3P-T 2SC5200G-x-T3P-T TO-3P 2SC5200L-x-T3B-T 2SC5200G-x-T3B-T TO-3PB 2SC5200L-x-T3L-T 2SC5200G-x-T3L-T TO-3PL Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B . |
2SC5200 |
| Part Number | 2SC5200 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable ope. |
| Features |
• High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are available. • Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200. |
2SC5200 |
| Part Number | 2SC5200 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fideli. |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 7A ; VCE= 5V COB Output Capacitance IE=0 ; VCB= . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5200A |
JILIN SINO |
Silicon NPN Transistor |
|
| 2 | 2SC5200B |
JILIN SINO |
Silicon NPN Transistor |
|
| 3 | 2SC5200H |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC5200N |
Toshiba |
NPN Transistor |
|
| 5 | 2SC5200N |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5201 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5206 |
Hitachi |
Silicon NPN Transistor |
|
| 8 | 2SC5207A |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5208 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SC5209 |
ETC |
NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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