| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
2SB1016A lute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and e |
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Toshiba Semiconductor |
Silicon PNP Transistor dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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Toshiba Semiconductor |
2SB1020A |
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Toshiba |
2SB1067 ility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( |
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Toshiba |
Silicon NPN/PNP Epitaxial Type Transistor ector (NPN) 5. Collector (PNP) JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Collector power dissipation (DC) Single-device operation PC (Note 2) 0.55 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 |
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Toshiba Semiconductor |
Silicon PNP Transistor . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em |
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Toshiba Semiconductor |
2SB1015A dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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Toshiba Semiconductor |
Silicon PNP Transistor lute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and e |
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Toshiba Semiconductor |
CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS 61.2 67.5 73.8 90 99 135 162 180 190 200 198 210 220 216 230 240 ZENER MEASUREIMPEDANCE MENT rd (Ω) CURRENT IZ (mA) TYP. MAX MAX 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 43 47 51 68 75 82 100 110 150 180 200 200 210 220 220 230 240 2 |
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Toshiba Semiconductor |
TRANSISTOR temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual |
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Toshiba |
2SB1018A ng temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individua |
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Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE OEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX 34 FORWARD VOLTAGE VF (V) MAX 1.2 MEASURE− MENT CURRENT IF (A) 0.2 REVERSE CURRENT IR (µA) MAX 10 MEASURE− MENT VOLTAGE VR (V) 3 6.8 7.5 8.3 30 10 4 5 1.2 0.2 10 4.5 7.4 8.2 9.1 30 10 4 6 |
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Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE OEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX 34 FORWARD VOLTAGE VF (V) MAX 1.2 MEASURE− MENT CURRENT IF (A) 0.2 REVERSE CURRENT IR (µA) MAX 10 MEASURE− MENT VOLTAGE VR (V) 3 6.8 7.5 8.3 30 10 4 5 1.2 0.2 10 4.5 7.4 8.2 9.1 30 10 4 6 |
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Toshiba Semiconductor |
Silicon PNP Transistor nificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling |
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Toshiba Semiconductor |
PNP Transistor ility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( |
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Toshiba |
SILICON PNP TRANSISTOR . High DC Current Gain : hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage : V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 |
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Toshiba |
SILICON PNP TRANSISTOR . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) |
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Toshiba Semiconductor |
CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS 61.2 67.5 73.8 90 99 135 162 180 190 200 198 210 220 216 230 240 ZENER MEASUREIMPEDANCE MENT rd (Ω) CURRENT IZ (mA) TYP. MAX MAX 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 43 47 51 68 75 82 100 110 150 180 200 200 210 220 220 230 240 2 |
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Toshiba Semiconductor |
CR TIMER |
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Toshiba Semiconductor |
INTERFACE DRIVER IC |
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Desde 2024. D4U Semiconductor.
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