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2SB1016A |
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| Part Number | 2SB1016A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = ... |
| Features |
lute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −1... |
| Document |
 2SB1016A Data Sheet
PDF 249.65KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SB1016 |
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| 2 | 2SB1016 |
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