| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fas |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft R |
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Vishay |
Glass Passivated Junction Fast Switching Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution |
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Vishay |
Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Meets environmental standard MI |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra- |
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Taiwan Semiconductor Company |
(RGP30x) Glass Passivated Junction Fast Recovery Rectifiers High temperature metallurgically bonded constructed Plastic material used carries Underwriters Laboratory Classification 94V-0 Glass passivated cavity-free junction Capable of meeting environmental standards of MIL-S-19500 3.0 ampere operation at TA= |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free |
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DIOTEC |
1 AMP HIGH RELIABILITY FAST RECOVERY DIODES MECHANICAL SPECIFICATION R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) |
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NTE |
Fast Switching Plastic Rectifier D Superectifier Structure for High Reliability Condition D Fast Switching for High Efficiency D Low Leakage Current, Typical IR less than 0.1A D High Forward Surge Capability Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Max. |
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TE |
Metal Glaze Fixed Resistors I The thick film is suitable for the manufacture of very high resistance values and for high voltage working components. I The combination of high values and high working voltage makes these components ideally suited for such applications as TVs, ele |
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General Semiconductor |
GLASS PASSIVATED JUNCTION FAST SWITCHING PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ 1.5 Ampere op |
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ZOWIE |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER * GPRC (Glass Passivated Rectifier Chip) inside * Glass passivated cavity-free junction * Capable of meeting environmental standards of MIL-S-19500 * For use in high frequence rectifier circuits * Fast switching for high efficiency * 3.0 Amperes oper |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 500V VCE(sat) ≤ 3.0V G @VGE = 15V, |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra- |
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TAITRON Components Incorporated |
(RGP30x) 3.0A Sintered Glass Passivated Fast Recovery Rectifier • Sintered www.DataSheet4U.com • • • • • glass passivated (SGP) rectifier chip Capable of meeting environmental standards of MIL-S-19500 For use in high frequence rectifier circuits Fast switching for high efficiency Typical IR less than 0.1uA High t |
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International Rectifier |
PDP TRENCH IGBT l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package www |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribut |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Par |
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Desde 2024. D4U Semiconductor.
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