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IRGP4063PBF |
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| Part Number | IRGP4063PBF |
| Manufacturer | International Rectifier |
| Description | PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSO... |
| Features |
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for incr... |
| Document |
 IRGP4063PBF Data Sheet
PDF 274.11KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGP4063-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGP4063D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGP4063D1-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGP4063D1PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGP4063DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGP4062-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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