IRGP4062DPBF |
Part Number | IRGP4062DPBF |
Manufacturer | International Rectifier |
Description | IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Ju... |
Features |
C
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode E n-channel • Tight parameter distribution • Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V CC Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transien... |
Document |
IRGP4062DPBF Data Sheet
PDF 430.21KB |
Similar Datasheet
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1 | IRGP4062D-EPbF |
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INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGP4062-EPBF |
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3 | IRGP4063-EPBF |
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4 | IRGP4063D-EPBF |
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5 | IRGP4063D1-EPBF |
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INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGP4063D1PBF |
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