Solitron Devices SD1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SD11912	Solitron Devices	SiC Dual MOSFET Power Module & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
2	SD11705	Solitron Devices	1200V SiC N-Channel Power MOSFET LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND S
3	SD11710	Solitron Devices	700V SiC N-Channel Power MOSFET ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPE
4	SD11810	Solitron Devices	650V Silicon Carbide Schottky Diode NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS 1 3 PARALLEL DEVICES WIT
5	SD11806	Solitron Devices	Dual 1200V Silicon Carbide Schottky Diode VRRM 1200V IF @ 125°C 20A/40A ISOLATED BACKSIDE ZERO REVERSE RECOVERY TO-258 HERMETIC PACKAGE MIL-PRF-19500 SCREENING AVAILABLE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRI
6	SD11812	Solitron Devices	1200V Silicon Carbide Dual Schottky Doubler Diode NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS PARALLEL DEVICES WITHOUT THE
7	SD11957	Solitron Devices	SiC Half-Bridge Power Module & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
8	SD11807	Solitron Devices	650V Silicon Carbide Schottky Diode NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS 1 3 PARALLEL DEVICES WIT
9	SD11428	Solitron Devices	1200V Silicon Carbide IGBT BVces 1200V Ids (on) @ 125°C 22A TO-3 PACKAGE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY C D1 G E APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ORDERING GUIDE Part Number SD11428 Description 1200
10	SD11801	Solitron Devices	1200V Silicon Carbide Schottky Diode VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ABSOLUTE MAXIMUM RATI
11	SD11803	Solitron Devices	1200V 10A Silicon Carbide Schottky Diode NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS PARALLEL DEVICES WITHOUT THE
12	SD11704	Solitron Devices	900V SiC N-Channel Power MOSFET LOW RDS(ON) AND QG AVALANCHE RATED TO-258 5L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND S
13	SD11808	Solitron Devices	1700V 10A Silicon Carbide Schottky Diode NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS PARALLEL DEVICES WITHOUT THE
14	SD11910	Solitron Devices	SiC Half-Bridge Power Module & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
15	SD11740	Solitron Devices	1200V SiC N-Channel Power MOSFET ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIENCY EXCELLENT REVERSE RECOVERY APPLICATIONS HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES BATTERY CHARG
16	SD11461	Solitron Devices	N-Channel Power MOSFET LOW THERMAL RESISTANCE OPTIMIZED FOR FAST SWITCHING TO-258 OR TO-254 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC
17	SD11707	Solitron Devices	1200V SiC N-Channel Power MOSFET LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND S
18	SD11902	Solitron Devices	SiC Half-Bridge Power Module & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE