SD11902 |
Part Number | SD11902 |
Manufacturer | Solitron Devices |
Description | 1 S1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 S2 7 AC 8 N 9 P SD11902 SiC Half-Bridge Power Module - 1 VDS = 1200V RDSon = 32mΩ ID = 50A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED . |
Features |
& BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE • REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE • ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK • ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY • HIGH JUNCTION TEMPERATURE OPERATION • LOW JUNCTION TO CASE THERMAL RESISTANCE • REDUCED THERMAL REQUIREMENTS AND SYSTEM COST • INTEGRATED NTC TEMPERATURE SENSOR • RUGGED MOUNTING DUE TO. |
Datasheet |
SD11902 Data Sheet
PDF 177.53KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SD11910 |
Solitron Devices |
SiC Half-Bridge Power Module | |
2 | SD11912 |
Solitron Devices |
SiC Dual MOSFET Power Module | |
3 | SD11957 |
Solitron Devices |
SiC Half-Bridge Power Module | |
4 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
5 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
6 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
7 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
8 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors | |
9 | SD1133 |
SGS-Thomson |
(SD1xxx) Transistors | |
10 | SD1134 |
SGS-Thomson |
(SD1xxx) Transistors |