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SD11912 |
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| Part Number | SD11912 |
| Manufacturer | Solitron Devices |
| Description | 1 KS1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 KS2 7 D2 8 S2 9 S1 10 D1 SD11912 SiC Dual MOSFET Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION . |
| Features |
& BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE • REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE • ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK • ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY • HIGH JUNCTION TEMPERATURE OPERATION • LOW JUNCTION TO CASE THERMAL RESISTANCE • REDUCED THERMAL REQUIREMENTS AND SYSTEM COST • INTEGRATED NTC TEMPERATURE SENSOR • RUGGED MOUNTING DUE TO. |
| Datasheet |
 SD11912 Data Sheet
PDF 170.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SD11910 |
Solitron Devices |
SiC Half-Bridge Power Module |
|
| 2 | SD11902 |
Solitron Devices |
SiC Half-Bridge Power Module |
|
| 3 | SD11957 |
Solitron Devices |
SiC Half-Bridge Power Module |
|
| 4 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
|
| 5 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
|
| 6 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers |
|
| 7 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 8 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 9 | SD1133 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 10 | SD1134 |
SGS-Thomson |
(SD1xxx) Transistors |
|
Desde 2024. D4U Semiconductor.
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