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Silicon-Based Technology |
Small Signal Schottky Barrier Diodes and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Symbol Min. Typ. Max. Unit V(BR)R 40 0 |
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Silicon-Based Technology |
Small Signal Schottky Barrier Diodes and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Symbol VFM Electrical Characteristics |
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Silicon-Based Technology |
Small Signal Schottky Barrier Diodes and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Symbol Min. Typ. Max. Unit V(BR)R 30 2 |
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Silicon-Based Technology |
Small Signal Schottky Barrier Diodes and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Electrical Characteristics : (@TA=25° |
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Desde 2024. D4U Semiconductor.
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