SBT107WS |
Part Number | SBT107WS |
Manufacturer | Silicon-Based Technology |
Description | www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT107WS Series SBT107WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky ba... |
Features |
and Advantages:
Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability
www.DataSheet4U.com
Symbol Min. Typ. Max. Unit
V(BR)R 30 280 500 600 1.0 µA pF mV V
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage (Note 2)
Test Conditions
IR=100µA @IF=2.0mA @IF=15mA @ IF=50mA @IF=100mA VR=25V VR=0V, f=1.0MHZ
Forward Voltage (Note 2)
VFM
-
320 450 550 7
Reverse Current (Note 2) Total Capacitance
IRM CT
-
SBT
Silicon-... |
Document |
SBT107WS Data Sheet
PDF 189.35KB |
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