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SBT10K45WS |
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| Part Number | SBT10K45WS |
| Manufacturer | Silicon-Based Technology |
| Description | www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT10K45WS Series SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottk... |
| Features |
and Advantages:
Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability
www.DataSheet4U.com
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Reverse Current (Note 2) Total Capacitance
Symbol Min. Typ. Max. Unit
V(BR)R VFM IRM CT 45 350 0.07 6.0 380 0.5 mV µA pF
Test Conditions
IR=100µA IF=10mA VR=10V VR=10V, f=1.0MHZ
SBT
Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, H... |
| Document |
 SBT10K45WS Data Sheet
PDF 190.25KB |
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Desde 2024. D4U Semiconductor.
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