| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) meter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) ter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V µA Unit V(BR) IR 70 - I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage VF 300 600 750 375 705 880 410 750 1000 V I F = 1 mA I F = 10 mA I F = 15 m |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I F = 15 mA AC characteristi |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
mask-diffused gaasp led |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
General-Purpose Power Controller q Switched mode DC/DC-converter q CCITT ISDN compatible q Low power dissipation q Supply voltage range 8 to 70 V q Programmable input undervoltage protection q Programmable overcurrent protection q Soft start q Power housekeeping input q Oscillator s |
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Siemens Semiconductor Group |
Digital Answering Machine with Full Duplex Speakerphone SAM EC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Pin Definitions and Functions . . . . . |
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Siemens Semiconductor Group |
8-Bit CMOS Microcontroller USART with programmable 10-bit Baudrate-Generator Six interrupt sources, two priority levels Programmable 15-bit Watchdog Timer Oscillator Watchdog Fast Power On Reset Power Saving Modes P-DIP-40 package and P-LCC-44 package TA: 0 ˚C to 70 ˚C Temper |
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Siemens Semiconductor Group |
8-Bit CMOS Microcontroller USART Six interrupt sources, two priority levels Power saving modes Quick Pulse programming algorithm (C501-1E only) 2-Level program memory lock (C501-1E only) P-DIP-40, P-LCC-44, and P-MQFP-44 package Temperature ranges : SAB-C501 TA : 0 ˚C to 70 ˚ |
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Siemens Semiconductor Group |
8-Bit CMOS Microcontroller USART with programmable 10-bit Baudrate-Generator Six interrupt sources, two priority levels Programmable 15-bit Watchdog Timer Oscillator Watchdog Fast Power On Reset Power Saving Modes P-DIP-40 package and P-LCC-44 package TA: 0 ˚C to 70 ˚C Temper |
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Desde 2024. D4U Semiconductor.
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