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Q62702-A1186 |
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| Part Number | Q62702-A1186 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAS70-07W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 3 4 2 1 VPS05605 ESD: Electrostatic disch... |
| Features |
ter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V µA Unit
V(BR) IR
70 -
I (BR) = 10 µA
Reverse current
VR = 50 V VR = 70 V
Forward voltage
VF
300 600 750 375 705 880 410 750 1000
V
I F = 1 mA I F = 10 mA I F = 15 mA
AC characteristics Diode capacitance
CT
τ
-
1.5 34 2
2 100 -
pF ps Ω nH
VR = 0 V, f = 1 MHz
Charge carrier life time
I F = 25 mA
Differential forward resistance
rf Ls
I F = 10 mA, f = 10 kHz
Series inductance
Semiconductor Group Semiconductor Group
22
Ma 1998-11-01 -26-1998
BAS70-07W
Forward current IF = f (TA*;TS) * Package mounted... |
| Document |
 Q62702-A1186 Data Sheet
PDF 42.98KB |
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Desde 2024. D4U Semiconductor.
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