Q62702-A3469 Siemens Semiconductor Group clamping), Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

Q62702-A3469

Click to view a larger image

Part Number	Q62702-A3469
Manufacturer	Siemens Semiconductor Group
Description	BAS 70-06S Silicon Schottky Diode Array • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessm...
Features	characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I F = 15 mA AC characteristics Diode capacitance CT τ - 1.6 30 2 100 - pF ps Ω VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance rf I F = 10 mA, f = 100 MHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAS 70-06S Forward current IF = f (TA;TS) Package mounted on epoxy 100 mA IF 60 TS TA 40 20 ...
Document	Q62702-A3469 Data Sheet PDF 46.93KB

No.	Parte #	Fabricante	Descripción
1	Q62702-A3461	Siemens Semiconductor Group	Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
2	Q62702-A3466	Siemens Semiconductor Group	Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes)
3	Q62702-A3468	Siemens Semiconductor Group	Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
4	Q62702-A3470	Siemens Semiconductor Group	Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
5	Q62702-A3471	Siemens Semiconductor Group	Silicon Switching Diode (Switching applications High breakdown voltage)
6	Q62702-A3473	Siemens Semiconductor Group	NPN Silicon AF Transistor