| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Quad Driver Incl. Short-Circuit Signaling q q q Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type FZL 4145 D General Description Ordering Code Q67000-H8437 Package P-DIP-18-1 The IC co |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) meter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 |
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Siemens Semiconductor Group |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) HL EH PD21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 5 typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA µA µA V dB ______________________ |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) ter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V µA Unit V(BR) IR 70 - I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage VF 300 600 750 375 705 880 410 750 1000 V I F = 1 mA I F = 10 mA I F = 15 m |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I F = 15 mA AC characteristi |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 350 430 520 750 µA VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C Forward voltage VF mV V IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA AC Characteristics Diode c |
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Siemens Semiconductor Group |
Quad Driver Incl. Short-Circuit Signaling q q q Short-circuit signaling Four driver circuits for driving power transistors Turn-ON threshold setting from 1.5 to 7 V P-DSO-20-7 Type FZL 4146 G General Description Ordering Code Q67000-H8743 Package P-DSO-20-7 (SMD) The IC comprises four |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) ess otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 2 200 mV 320 385 440 570 350 430 520 750 µA Unit IR IR VF - VR = 30 V Reverse current VR = 30 V, TA = 85 °C Forward voltage I F = 1 mA I F = 10 mA |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 1/77 17.12.96 HL EH PD 21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 2 _____________________________________________________________________ |
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Siemens Semiconductor Group |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) B under load. Siemens Aktiengesellschaft pg. 1/7 17.12.96 HL EH PD 21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 10 ______________________ |
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Desde 2024. D4U Semiconductor.
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