| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) meter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
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Siemens Semiconductor Group |
T1(3mm) LED LAMP q q q q q colored, diffused package for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Semiconductor Group 1 1998-07-13 LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360 Typ |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 |
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Siemens |
Indicating lamps and push buttons que Twin push buttons - illuminated Indicators Compact indicators - LED Compact indicators - Filament Wide voltage band indicators - LED Modular indicators Contact blocks Compact Regular Illumination Modules Integrated LED BA9S LED BA9S Filament Conn |
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Siemens |
Indicating lamps and push buttons que Twin push buttons - illuminated Indicators Compact indicators - LED Compact indicators - Filament Wide voltage band indicators - LED Modular indicators Contact blocks Compact Regular Illumination Modules Integrated LED BA9S LED BA9S Filament Conn |
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Siemens Semiconductor Group |
TWO-COLOR/ RED AND GREEN CYLINDER LED LAMP |
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Siemens Semiconductor Group |
Dimmer IC for Halogen Lamps q q q q q q q q SLB 0587 CMOS IC Phase control for resistive and inductive loads Sensor operation – no machanically moved switching elements Operation possible from several extensions Capable of replacing electromechanical wall switches in conventi |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) ter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V µA Unit V(BR) IR 70 - I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage VF 300 600 750 375 705 880 410 750 1000 V I F = 1 mA I F = 10 mA I F = 15 m |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I F = 15 mA AC characteristi |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 350 430 520 750 µA VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C Forward voltage VF mV V IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA AC Characteristics Diode c |
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Siemens |
Indicating lamps and push buttons que Twin push buttons - illuminated Indicators Compact indicators - LED Compact indicators - Filament Wide voltage band indicators - LED Modular indicators Contact blocks Compact Regular Illumination Modules Integrated LED BA9S LED BA9S Filament Conn |
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Siemens |
Indicating lamps and push buttons que Twin push buttons - illuminated Indicators Compact indicators - LED Compact indicators - Filament Wide voltage band indicators - LED Modular indicators Contact blocks Compact Regular Illumination Modules Integrated LED BA9S LED BA9S Filament Conn |
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Desde 2024. D4U Semiconductor.
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