Siemens Group BBY Hoja de datos

No.	parte #	Fabricante	Descripción
1	BBY24-S1	Siemens Group	Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) pF Unit Capacitance ratio VR1 = 0, VR2 = 120 V Semiconductor Group 2
2	BBY25-S1	Siemens Group	Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) pF Unit Capacitance ratio VR1 = 0, VR2 = 120 V Semiconductor Group 2
3	BBY26-S1	Siemens Group	Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) pF Unit Capacitance ratio VR1 = 0, VR2 = 120 V Semiconductor Group 2
4	BBY33DA-2	Siemens Group	Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit)
5	BBY24-BBY27	Siemens Group	Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) pF Unit Capacitance ratio VR1 = 0, VR2 = 120 V Semiconductor Group 2
6	BBY27-S2	Siemens Group	Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) pF Unit Capacitance ratio VR1 = 0, VR2 = 120 V Semiconductor Group 2
7	BBY33BB-2	Siemens Group	Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design)
8	BBY34C	Siemens Group	Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) 10 3.8 – – nA pF – – IR CT 3.4 – CT2 CT20 Q 4.3 400 – – – – – 1.7 – – – – – – 10 nA pF Values typ. max. Unit
9	BBY34D	Siemens Group	Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) 10 3.8 – – nA pF – – IR CT 3.4 – CT2 CT20 Q 4.3 400 – – – – – 1.7 – – – – – – 10 nA pF Values typ. max. Unit
10	BBY35F	Siemens Group	Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
11	BBY51	Siemens Group	Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor
12	BBY52	Siemens Group	Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jul-04-1996 BBY 52 Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR
13	BBY53	Siemens Group	Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 53 Diode capacitance CT = f (VR) f = 1MHz 0.6 CT pF 0.4 0.3 0.2 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Semiconductor
14	BBY55-02W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-11-01
15	BBY55-03W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-
16	BBY56-02W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - Ω pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconduc
17	BBY56-03W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 1 MHz VR = 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - Ω pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground
18	BBY57-02W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f
19	BBY57-03W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 5 - pF VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH
20	BBY58-02W	Siemens Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) .3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistanc