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BBY57-03W |
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| Part Number | BBY57-03W |
| Manufacturer | Siemens Group |
| Description | BBY 57-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation fo... |
| Features |
5 -
pF
VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T3 CT1/C T4 rs CC Ls
3 -
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -03-1998
BBY 57-03W
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -1
40
pF
1/°C
CT
30
T Cc
10 -2
25
20
15
10 -3
10
5 10 -4 0.0
0 0.... |
| Document |
 BBY57-03W Data Sheet
PDF 14.58KB |
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Desde 2024. D4U Semiconductor.
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