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| Part Number | BBY57-02W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BBY57-02W |
| Manufacturer | Siemens Group |
| Title | Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
| Description | BBY 57-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs 2 1 VES. |
| Features | 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 57-0. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BBY57-02L |
Infineon |
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| 2 | BBY57-02V |
Infineon |
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| 3 | BBY57-03W |
Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 4 | BBY57-05W |
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|
| 5 | BBY57 |
Infineon Technologies AG |
Silicon Tuning Diode |
|
| 6 | BBY51 |
Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
|
| 7 | BBY51 |
Infineon Technologies AG |
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|
| 8 | BBY51-02L |
Infineon |
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|
| 9 | BBY51-02V |
Infineon |
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|
| 10 | BBY51-02W |
Infineon |
Silicon Tuning Diode |
|
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