BBY56-02W Siemens Group Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BBY56-02W

Siemens Group
BBY56-02W
BBY56-02W BBY56-02W
zoom Click to view a larger image
Part Number BBY56-02W
Manufacturer Siemens Group
Description BBY 56-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communi...
Features 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - Ω pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -14-1998 ...

Document Datasheet BBY56-02W Data Sheet
PDF 13.86KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BBY56-02V
Infineon
Silicon Tuning Diode Datasheet
2 BBY56-02W
Infineon
Silicon Tuning Diode Datasheet
3 BBY56-03W
Siemens Group
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Datasheet
4 BBY56-03W
Infineon
Silicon Tuning Diode Datasheet
5 BBY56
Infineon Technologies AG
Silicon Tuning Diode Datasheet
6 BBY51
Siemens Group
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Datasheet
More datasheet from Siemens Group
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad