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| Part Number | BBY56-03W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BBY56-03W |
| Manufacturer | Infineon |
| Title | Silicon Tuning Diode |
| Description | Silicon Tuning Diode • Excellent linearity • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free (RoHS compliant) package BBY56... BBY56-02V BBY56-02W BBY56-03W Type BBY56-02V BBY56-02W* BBY56-03W. |
| Features | .8 15.8 16.8 - 12.1 - Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz VR = 1 V, VR = 4 V, f = 1 MHz CT1/CT3 2.15 - 2.53 3.3 - Series resistance VR = 1 V, f = 470 MHz rS - 0.25 - Unit nA pF Ω 2 2014-02-11 BBY56... IR CT TCc Diode capacitance CT = ƒ (VR) f = 1MHz 100 pF 80 70 60 50 40 30 20 10 00 1 2 3 V 5 VR Temperature coefficient of the diode capacitance TCc = ƒ (VR) f = 1 MHz 0.. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BBY56-02V |
Infineon |
Silicon Tuning Diode |
|
| 2 | BBY56-02W |
Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 3 | BBY56-02W |
Infineon |
Silicon Tuning Diode |
|
| 4 | BBY56 |
Infineon Technologies AG |
Silicon Tuning Diode |
|
| 5 | BBY51 |
Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
|
| 6 | BBY51 |
Infineon Technologies AG |
Silicon Tuning Diode |
|
| 7 | BBY51-02L |
Infineon |
Silicon Tuning Diode |
|
| 8 | BBY51-02V |
Infineon |
Silicon Tuning Diode |
|
| 9 | BBY51-02W |
Infineon |
Silicon Tuning Diode |
|
| 10 | BBY51-03W |
Infineon |
Silicon Tuning Diode |
|
Desde 2024. D4U Semiconductor.
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