No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SiPU |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 80@ VGS=-4.5V 100 @ VGS=-2.5V NOTE The Si2307is available in a lead-free package D S |
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SiPU |
P-Channel MOSFET Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2305 is available in a lead-free package D S |
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SiPU |
N-Channel MOSFET Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 35@ VGS=4.5V 56 @ VGS=2.5V NOTE The Si2312is available in a lead-free package D S G ABS |
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SiPU |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-free package D S G A |
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SiPU |
N-Channel MOSFET Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2300 is available in a lead-free package D S G A |
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SiPU |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 65@ VGS=4.5V 90@ VGS=2.5V NOTE The Si2304 is available in a lead-free package D S G ABS |
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SiPU |
P-Channel MOSFET Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2301 is available in a lead-free package D S |
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