Si2307 |
Part Number | Si2307 |
Manufacturer | SiPU |
Description | Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID... |
Features |
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-4.0A
80@ VGS=-4.5V 100 @ VGS=-2.5V
NOTE The Si2307is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
unless otherwise noted
Symbol
VDS VGS ID
Limit
-20 ±12 -4.0
IDM -12
IS -1.25 PD 1.25
TJ,TSTG
-55 to 15... |
Document |
Si2307 Data Sheet
PDF 113.88KB |
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