SemiHow HFH Hoja de datos

No.	parte #	Fabricante	Descripción
1	HFH19N60	SemiHow	N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS(
2	HFH10N80	SemiHow	N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(
3	HFH9N90	SemiHow	N-Channel MOSFET  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(
4	HFH6N90	SemiHow	N-Channel MOSFET  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(
5	HFH11N90	SemiHow	N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS(
6	HFH10N90Z	SemiHow	N-Channel MOSFET Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Ty
7	HFH18N50S	SemiHow	N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(
8	HFH7N80	SemiHow	N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(
9	HFH13N80	SemiHow	N-Channel MOSFET  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 68 nC (Typ.)  Extended Safe Operating Area  Lower RDS(