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HFH10N80 |
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| Part Number | HFH10N80 |
| Manufacturer | SemiHow |
| Description | HFH10N80 Dec 2005 HFH10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolog... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.92 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) ... |
| Document |
 HFH10N80 Data Sheet
PDF 208.62KB |
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