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HFH9N90 |
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| Part Number | HFH9N90 |
| Manufacturer | SemiHow |
| Description | HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) G... |
| Document |
 HFH9N90 Data Sheet
PDF 1.12MB |
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Desde 2024. D4U Semiconductor.
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