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| Part Number | HFH9N90 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HFH9N90 |
| Manufacturer | SemiHow |
| Title | N-Channel MOSFET |
| Description | HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : . |
| Features | Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specifie. |
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Desde 2024. D4U Semiconductor.
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