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HFH9N90 |
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| Part Number | HFH9N90 |
| Manufacturer | HUASHAN ELECTRONIC |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state r... |
| Features |
• 9A, 900V(See Note), RDS(on) <1.4Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-3P 1- G 2-D 3-S Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperature ------------------------... |
| Document |
 HFH9N90 Data Sheet
PDF 677.68KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | HFH9N90 |
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| 2 | HFH10N80 |
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Desde 2024. D4U Semiconductor.
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