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SemiHow |
N-Channel MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 7.5 0.6 14 Unit V A ȍ nC Application Switch Mode |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
800V N-Channel Super Junction MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25 unless otherwise |
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SemiHow |
800V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A ȍ nC Application Switch Mode P |
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SemiHow |
N-Channel MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 600 23 0.14 22 Unit V A ȍ nC Application Lighting H |
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SemiHow |
N-Channel MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 20 0.16 41 Unit V A ȍ nC Application Switch Mode |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
600V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 20 0.18 22 Unit V A ȍ nC Application Telecom Powe |
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SemiHow |
700V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application Lighting Hard Switching PWM Server Power Supply Charger Key Parameters Parameter |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 11 0.38 17.5 Unit V A ȍ nC Application Switch Mod |
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SemiHow |
500V N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel Super Junction MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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Desde 2024. D4U Semiconductor.
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