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HCS60R180S |
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| Part Number | HCS60R180S |
| Manufacturer | SemiHow |
| Description | HCS60R180S HCS60R180S 600V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances ... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
April 2015
BVDSS = 600 V RDS(on) typ = 0.15 ȍ ID = 21 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25) – Conti... |
| Document |
 HCS60R180S Data Sheet
PDF 162.49KB |
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Desde 2024. D4U Semiconductor.
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