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HCS65R360S |
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| Part Number | HCS65R360S |
| Manufacturer | SemiHow |
| Description | HCS65R360S HCS65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances ... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
November 2014
BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25) – Co... |
| Document |
 HCS65R360S Data Sheet
PDF 164.59KB |
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