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SeCoS |
P-Channel Enhancement Mode Power MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 105P03 =Date Code ORDER INFORMATION Part Number Type SSE105P03-C Lead (Pb)-free and Halogen-free REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.5 2.54 |
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SeCoS |
N-Channel Enhancement Mode Power MosFET Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 102N10SV =Date Code ORDER INFORMATION 1 Gate Part Number Type SSE102N10SV-C Lead (Pb)-free and Halogen-free 2 Drai |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 |
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SeCoS |
N-Channel Shielded Gate Trench Power MOSFET Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 166N10SV =Date Code ORDER INFORMATION 1 Gate Part Number Type SSE166N10SV-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF |
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SeCoS |
N-Channel Enhancement Mode MosFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. G E A S F H I J K L U X M P APPLICATION DC-DC converte |
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SeCoS |
P-Channel Enhancement Mode MosFET z z z Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS REF. A b c D E L4 www.DataSheet.co.kr Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4. 80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e |
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SeCoS |
N-Channel Enhancement Mode MosFET G H J K L M Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 |
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SeCoS |
N-Channel Enhancement Mode MosFET Low RDS(on) trench technology. Low thermal impedance Fast Switch Speed. E G D C B R T A S APPLICATIONS White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits H F J K L I U X M P N O V Q Q W 1 2 3 N-Channel |
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SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Mi |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1 |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET 8A, 600V, RDS(ON)(TYP.)=0.96Ω@VGS=10V Low Gate Charge Low Crss Fast Switching Improved dv/dt Capability 1 Gate 2 Drain 3 Source TO-220P REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H |
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SeCoS |
N-Channel Shielded Gate Trench Power MOSFET Shielded Gate Trench Technology Super Low Gate Charge Green Device Available MARKING 70N15SV = Date Code ORDER INFORMATION Part Number Type SSE70N15SV-C Lead (Pb)-free and Halogen-free Gate Drain Source ABSOLUTE MAXIMUM |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 38N03 =Date Code ORDER INFORMATION 1 Part Number Type Gate SSE38N03-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available MARKING 104N10 Date Code 1 ORDER INFORMATION Gate Part Number Type SSE104N10-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source RE |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 190N04S Date Code ORDER INFORMATION 1 Gate Part Number Type SSE190N04S-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Ma |
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SeCoS |
N-Channel Enhancement Mode MosFET E G A T S Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. F H I J K L X M U P N APPLICAT |
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SeCoS |
N-Channel Enhancement Mode MosFET * Low On-Resistance * Simple Drive Requirement REF. A b c D E L4 L5 www.DataSheet.co.kr D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 |
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SeCoS |
N-Channel Enhancement Mode MosFET * Low Gate Charge * Simple Drive Requirement REF. A b c D E L4 L5 www.DataSheet.co.kr D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 1 |
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SeCoS |
Transient Voltage Suppressors z 0.55~0.65 z z z z z z z Small Body Outline Dimensions: 0.039” x 0.024”(1.0 mm x 0.60 mm) Low Body Height: 0.017” (0.43 mm) Max Stand−off Voltage: 3.3 V Low Leakage Current Response Time is typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Hu |
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Desde 2024. D4U Semiconductor.
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