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SSE07N80SL |
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| Part Number | SSE07N80SL |
| Manufacturer | SeCoS |
| Description | The SSE07N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Availabl. |
| Features | Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 800 Gate-Source Voltage VGS ±30 TC=25°C 7 Continuous Drain Current ID TC=100°C 4.4 Pu. |
| Datasheet |
 SSE07N80SL Data Sheet
PDF 562.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSE04N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 2 | SSE04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SSE08N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 4 | SSE102N10SV-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 5 | SSE104N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 6 | SSE105P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |
|
| 7 | SSE110N03-03P |
SeCoS |
N-Channel Enhancement Mode MOSFET |
|
| 8 | SSE12N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 9 | SSE133N12S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
|
| 10 | SSE14N65H-C |
SeCoS |
N-Channel Super Junction Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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