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SSE104N10-C |
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| Part Number | SSE104N10-C |
| Manufacturer | SeCoS |
| Description | The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE104N10-C meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO-220 FEATURES Advanced High Cell D. |
| Features | Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available MARKING 104N10 Date Code 1 ORDER INFORMATION Gate Part Number Type SSE104N10-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.96 10.36 14.7 16 2.74 BSC. 12.7 14.73 1.15 1.82 0.39 1.01 3.56 4.82 REF. H I J K L M Millimeter Min. Max. 2.54 BSC. 2.04 2.92 3.745 REF. 0.356 0.5 5.85 6.85 0.51 1.39 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1, @VGS=10V Pulsed Drain C. |
| Datasheet |
 SSE104N10-C Data Sheet
PDF 600.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSE102N10SV-C |
SeCoS |
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| 2 | SSE105P03-C |
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P-Channel Enhancement Mode Power MOSFET |
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| 3 | SSE110N03-03P |
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N-Channel Enhancement Mode MOSFET |
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| 4 | SSE12N65SL |
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N-Ch Enhancement Mode Power MOSFET |
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| 5 | SSE133N12S-C |
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| 6 | SSE14N65H-C |
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| 7 | SSE16020 |
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| 8 | SSE166N10SV-C |
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| 9 | SSE190N04S-C |
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| 10 | SSE04N60SL |
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N-Ch Enhancement Mode Power MOSFET |
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Desde 2024. D4U Semiconductor.
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