SeCoS SJP Hoja de datos

No.	parte #	Fabricante	Descripción
1	SJP110SN10J-C	SeCoS	N-Channel MOSFET  High density cell design for ultra low RDS(ON)  High Power and current handing capability  Load switch  Good stability and uniformity with high EAS  Excellent package for good heat dissipation APPLICATIONS  SMPS and general purpose applicatio
2	SJP110SN04-C	SeCoS	N-Channel Shielded Gate Trench Power MOSFET High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICATIONS Networking Load Switch LED applications MARKING CJAC 110SN04 = Productio
3	SJP65SN10J-C	SeCoS	N-Channel Enhancement Mode Power MOSFET High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS