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SJP65SN10J-C |
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| Part Number | SJP65SN10J-C |
| Manufacturer | SeCoS |
| Description | SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipati. |
| Features | High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS High side switch in POL DC/DC converter Secondary side synchronous rectifier MARKING CJAC 65SN10 = Production Line Indication REF. A B C D E F G Millimeter Min. Max. 5.65 5.85 5.95 6.15 4.85 5 4.80 5.40 0.45 TYP. 3.30 3.50 1.70 TYP. REF. H I J K L M N Millimeter Min. Max. 1.27 TYP. 4.20 TYP. 0.38 0.50 0.38 0.50 0.34 0.48 0.254 REF. 1. |
| Datasheet |
 SJP65SN10J-C Data Sheet
PDF 241.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SJP110SN04-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
|
| 2 | SJP110SN10J-C |
SeCoS |
N-Channel MOSFET |
|
| 3 | SJPA-D3 |
Sanken |
Schottky Diode |
|
| 4 | SJPA-L3 |
Sanken |
Schottky Diode |
|
| 5 | SJPB-D4 |
Sanken |
Schottky Diode |
|
| 6 | SJPB-D6 |
Sanken |
Schottky Diode |
|
| 7 | SJPB-D9 |
Sanken |
Schottky Diode |
|
| 8 | SJPB-H4 |
Sanken |
Schottky Diode |
|
| 9 | SJPB-H6 |
Sanken |
Schottky Diode |
|
| 10 | SJPB-H9 |
Sanken |
Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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