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SJP110SN04-C |
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| Part Number | SJP110SN04-C |
| Manufacturer | SeCoS |
| Description | SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICATIONS N. |
| Features | High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICATIONS Networking Load Switch LED applications MARKING CJAC 110SN04 = Production Line Indication REF. A B C D E F G Millimeter Min. Max. 5.65 5.85 5.90 6.15 4.80 5.00 5.02 TYP. 0.38 0.576 3.25 3.58 1.10 1.39 REF. H I J K L M N Millimeter Min. Max. 1.27 TYP. 3.85 4.15 0.51 0.86 0.55 0.85 0.33 0.50 0.254 REF. 0.90 1.17 PACKAGE INFORMATION Package MPQ DFN5x6-8J 5K Leader Size 13 inch ORDER INFORMATION Part Number Ty. |
| Datasheet |
 SJP110SN04-C Data Sheet
PDF 250.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SJP110SN10J-C |
SeCoS |
N-Channel MOSFET |
|
| 2 | SJP65SN10J-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | SJPA-D3 |
Sanken |
Schottky Diode |
|
| 4 | SJPA-L3 |
Sanken |
Schottky Diode |
|
| 5 | SJPB-D4 |
Sanken |
Schottky Diode |
|
| 6 | SJPB-D6 |
Sanken |
Schottky Diode |
|
| 7 | SJPB-D9 |
Sanken |
Schottky Diode |
|
| 8 | SJPB-H4 |
Sanken |
Schottky Diode |
|
| 9 | SJPB-H6 |
Sanken |
Schottky Diode |
|
| 10 | SJPB-H9 |
Sanken |
Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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