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N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 2 ORDER INFORMATION Drain Part Number SSD25N |
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N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF |
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N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 20N06 = Date Code PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch 2 ORDER INFORMATION Drain Part Number Type |
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P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. A B C D PRODUCT SUMMARY VDS(V) -30 PRODUCT SUMMARY R |
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N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-fr |
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N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 23N04 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD23N04-C Lead (Pb)-fre |
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250W Plastic Encapsulate ESD Protection Diodes IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) Protects one I/O line (bidirectional) Low clamping voltage MECHANICAL DATA Case：SOD-323 Flammability Rating: UL 94V-0 High temperature soldering guaranted:260℃/10s MARKI |
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Transistor Low saturation voltage Excellent DC current gain characteristic TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage Emitter to Base Voltage VCEO VE |
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NPN Transistor Darling Connection Provides High DC Current Gain (hFE) Large Collector Power Dissipation Low Frequency and Power Amplifier MARKING 2SD2396 ITO-220J CLASSIFICATION OF hFE Product-Rank 2SD2396-J Range 600~1200 ORDER INFORMATION Part Number Type |
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N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology A B C D GE PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY |
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P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -40 PRODUCT SUMMARY |
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P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY |
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Super Fast Rectifier Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability MECHANICAL DATA Case：Molded plastic ITO-220Y Epoxy：UL 94V-0 rate flame retardant Terminals：S |
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NPN Silicon Epitaxial PlanarTransistor * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max |
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NPN Transistor Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2 |
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NPN-PNP Transistors 40V complementary device Mounting cost and area can be cut in half High hFE MARKING 2045 PACKAGING DIMENSION Package MPQ SOT-26 3K Leader Size 7 inch SOT-26 D H AC EL BJ K FG REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 R |
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NPN Transistor High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.) CLASSIFICATION OF hFE Product-Rank 2SD2114-V Range 820~1800 Marking BBV SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J PACKAGE INFORMATION Package MPQ SOT-23 3K Lea |
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NPN Transistor Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~9 |
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NPN Transistor Low VCE(sat) SOT-89 MARKING DT 4 123 A EC PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch B F G H J D K L 1. Base 2. Collector 3. Emitter ORDER INFORMATION Part Number Type 2SD2391 Lead (Pb)-free 2SD2391-C Lead (Pb)-f |
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350W Plastic Encapsulate ESD Protection Diodes Transient protection for high-speed data lines IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) Protects one I/O line (bidirectional) Low clamping voltage Low leakage current Response time<1ns MECHANICAL |
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Desde 2024. D4U Semiconductor.
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