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SSD29N10J-C |
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| Part Number | SSD29N10J-C |
| Manufacturer | SeCoS |
| Description | The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD29N10J-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Supe. |
| Features | Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current @VGS=10V 1 ID TC=100°C Pulsed Drain Current 4 IDM Total Power Dissipation 3 TC=25°C PD TA=25°C Operating Junction and Storage Temperature Range TJ, TSTG. |
| Datasheet |
 SSD29N10J-C Data Sheet
PDF 219.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 2 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 3 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET |
|
| 4 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET |
|
| 5 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 6 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET |
|
| 7 | SSD2030P |
South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET |
|
| 8 | SSD20N03 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 9 | SSD20N06 |
SeCoS |
N-channel MOSFET |
|
| 10 | SSD20N06-90D |
SeCoS |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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