Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SD2061 |
| Part Number | 2SD2061 |
| Manufacturer | Jiangsu Changjiang Electronics |
| Title | Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO . |
| Features | z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC www.DataSheet4U.com Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Value 80 60 5 3 2 150. |
2SD2061 |
| Part Number | 2SD2061 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute max. |
| Features | ctor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A; IB=0.2A IC=2A ;IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V;f=5MHz IE=0 ; VCB=10V. |
2SD2061 |
| Part Number | 2SD2061 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(TYP.) @ IC= 2A ·Collector Power Dissipation : PC = 30W (Max) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABS. |
| Features | tter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC=0 hFE DC Current Gain . |
2SD2061 |
| Part Number | 2SD2061 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package. / Features , ,PC=30W,。 Low VCE(sat),excellent DC current gain characteristics, PC=30W,wide SOA. / Applications 。 General Purpose Power Amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：. |
| Features | , ,PC=30W,。 Low VCE(sat),excellent DC current gain characteristics, PC=30W,wide SOA. / Applications 。 General Purpose Power Amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range E 100～200 F 160～320 http://www.fsbrec.com 1/6 2SD2061 Rev.E Mar.-2016 / Absolute Maximum Ratings(. |
2SD2061 |
| Part Number | 2SD2061 |
| Manufacturer | SeCoS |
| Title | Transistor |
| Description | Elektronische Bauelemente 2SD2061 3A, 80V P Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low saturation voltage Excellent DC current gain characteristic TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parame. |
| Features | Low saturation voltage Excellent DC current gain characteristic TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage Emitter to Base Voltage VCEO VEBO Continuous Collector Current Collector Power Dissipation Junction and Storage Temperature IC PC TJ, TSTG REF. A B C D E F G H Millimeter Min. M. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2060 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2060 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2062 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2064 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2065 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2065 |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SD2066 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2066 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2067 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD200 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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