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SeCoS |
NPN Transistor High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) CLASSIFICATION OF hFE Product-Rank 2SD601A-Q Range 160~260 Marking Code ZQ 2SD601A-R 210~340 ZR 2SD601A-S 290~460 ZS SOT-23 A L 3 Top View CB 12 K |
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SeCoS |
NPN Epitaxial Planar Silicon Transistor Ratings 40 32 5.0 2.0 0.5 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO Min. 40 32 Typ. |
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SeCoS |
NPN Transistor Low collector to emitter saturation voltage VCE(sat) CLASSIFICATION OF hFE (1) Product-Rank 2SD602-Q 2SD602-R Range 85~170 120~240 Marking Code WQ1 WR1 2SD602-S 170~340 WS1 Product-Rank Range Marking Code 2SD602A-Q 85~170 XQ 2SD602A-R 120 |
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SeCoS |
NPN Plastic Encapsulated Transistor Small Flat Package SOT-89 4 High Breakdown Voltage Excellent DC Current Gain Linearity A B C 3 E C 1 2 CLASSIFICATION OF hFE(1) Product-Rank Range Marking 2SD1005-W 90~180 BW 2SD1005-V 135~270 BV 2SD1005-U B E D F G H K J L 200~400 BU Collec |
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SeCoS |
NPN Silicon General Purpose Transistor SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O 2 3 o e e1 b C 1.BASE 2.COLLECTOR 3.EMITTER Di |
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SeCoS |
Transistor Low saturation voltage Excellent DC current gain characteristic TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage Emitter to Base Voltage VCEO VE |
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SeCoS |
NPN Transistor Darling Connection Provides High DC Current Gain (hFE) Large Collector Power Dissipation Low Frequency and Power Amplifier MARKING 2SD2396 ITO-220J CLASSIFICATION OF hFE Product-Rank 2SD2396-J Range 600~1200 ORDER INFORMATION Part Number Type |
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SeCoS |
NPN Silicon General Purpose Transistor z z z Dim A L 3 Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sa |
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SeCoS |
NPN Silicon Epitaxial PlanarTransistor * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max |
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SeCoS |
NPN Transistor Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2 |
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SeCoS |
NPN Transistor Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468S-Q 2SD1468S-R 2SD1468S-S Range 120~270 180~390 270~560 TO-92S REF. A B C D E F G H J K L Millimete |
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SeCoS |
NPN-PNP Transistors 40V complementary device Mounting cost and area can be cut in half High hFE MARKING 2045 PACKAGING DIMENSION Package MPQ SOT-26 3K Leader Size 7 inch SOT-26 D H AC EL BJ K FG REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 R |
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SeCoS |
NPN Transistor High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.) CLASSIFICATION OF hFE Product-Rank 2SD2114-V Range 820~1800 Marking BBV SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J PACKAGE INFORMATION Package MPQ SOT-23 3K Lea |
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SeCoS |
NPN Transistor Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~9 |
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SeCoS |
NPN Transistor Audio amplifier Flasg unit of camera Switching circuit CLASSIFICATION OF hFE(2) Rank Q Range 230 - 380 R 340 - 600 S 560 - 800 SOT-89 B 1 C2 E3 A EC 4 BD FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 |
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SeCoS |
NPN Transistor Low VCE(sat) SOT-89 MARKING DT 4 123 A EC PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch B F G H J D K L 1. Base 2. Collector 3. Emitter ORDER INFORMATION Part Number Type 2SD2391 Lead (Pb)-free 2SD2391-C Lead (Pb)-f |
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SeCoS Halbleitertechnologie GmbH |
NPN Transistor z Darlington connection for a high hFE z High input impedance MARKING：R1M Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1.BASE |
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SeCoS |
Schottky Barrier Diode eet.co.kr ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified.) PARAMETER Reverse Breakdown Voltage Maximum Instantaneous Forward Voltage Maximum Average Reverse Current SYMBOL V(BR)R VF IR MIN 30 - MAX 500 50 100 UNIT V mV µA µA IR=1 |
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SeCoS |
PNP Silicon Medium Power Transistor b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dim |
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SeCoS |
NPN Transistor Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468-Q 2SD1468-R Range 120~270 180~390 2SD1468-S 270~560 TO-92 REF. A B C D E F G H J K Millimeter |
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Desde 2024. D4U Semiconductor.
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