2SD1619 |
Part Number | 2SD1619 |
Manufacturer | SeCoS |
Description | 2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Colle... |
Features |
b1
Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć
b
L
E
e e1
C
Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min
Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043
0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.1... |
Document |
2SD1619 Data Sheet
PDF 158.52KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1610 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1611 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1614 |
NEC |
NPN Transistor | |
4 | 2SD1615 |
NEC |
NPN Transistor | |
5 | 2SD1615 |
Guangdong Kexin Industrial |
NPN Silicon Transistor | |
6 | 2SD1615A |
NEC |
NPN Transistor |