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2SD1664 |
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| Part Number | 2SD1664 |
| Manufacturer | SeCoS |
| Description | 2SD1664 Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 A NPN Silicon General Purpose Transistor Features SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collecto... |
| Features |
SOT-89
E1
b1
1
L
Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C
O O
2 3 o
e e1
b C
1.BASE 2.COLLECTOR 3.EMITTER
Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 0.114 0.035 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP 0.122 0.043 Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.16... |
| Document |
 2SD1664 Data Sheet
PDF 111.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1662 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1662 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SD1663 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1664 |
Rohm |
Medium Power Transistor |
|
| 5 | 2SD1664 |
FASTSTAR SEMICONDUCTOR |
1A Medium Power Silicon Transistor |
|
| 6 | 2SD1664 |
UTC |
MEDIUM POWER NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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